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Vol 2 - FDSOI

Nanoelectronic Devices


List of Articles

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

An analytical expression of free top surface charge sensitivity in FDSOI MOS structure has been established for weak inversion region and validated by TCAD numerical simulation. The influence of various FDSOI stack parameters has been analyzed. The impact of the interface (...)


gm/ID based methodology for capacitive feedback LNA design

A gm/ID based methodology is detailed in this paper in order to help the designers to determine the optimum size of a capacitive feedback LNA by considering the design topology, the specifications to reach and the technology characteristics. Thanks to this methodology, the (...)


22FDX® Technologies for Ultra-Low Power IoT, RF and mmWave Applications

In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at (...)


Electrical characterization of advanced FDSOI CMOS devices

FDSOI technologies are very promising candidates for future CMOS circuits as they feature low variability, improved short channel effect and good transport characteristics. In this paper, we review the main electrical techniques and methodologies used to characterize the (...)


Other issues :

2018

Volume 18- 1

Tunnel FETs

2019

Volume 19- 2

FDSOI