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Physique   > Accueil   > Composants nanoélectroniques   > Tunnel FETs   > Article

Effets limitant la performance des FET Tunnel

Capturing Performance Limiting Effects in Tunnel-FETs


Michael Graef
Technische Hochschule Mittelhessen
Germany

Fabian Hosenfeld
Technische Hochschule Mittelhessen
Germany

Fabian Horst
Technische Hochschule Mittelhessen
Germany

Atieh Farokhnejad
Technische Hochschule Mittelhessen
Germany

Benjamín Iñíguez
Universitat Rovira i Virgili
Spain

Alexander Kloes
Technische Hochschule Mittelhessen
Germany



Publié le 20 février 2018   DOI : 10.21494/ISTE.OP.2018.0220

Résumé

Abstract

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In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a re-evaluation of performance limiting aspects of fabricated TFET devices.

In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a re-evaluation of performance limiting aspects of fabricated TFET devices.

Random Dopant Fluctuation (RDF) Randomized Profiles Gaussian Doping Profiles Trap-Assisted- Tunneling (TAT) Double-Gate (DG) Tunnel-FET Analytical Modeling

Random Dopant Fluctuation (RDF) Randomized Profiles Gaussian Doping Profiles Trap-Assisted- Tunneling (TAT) Double-Gate (DG) Tunnel-FET Analytical Modeling