TY  - Type of reference 
TI  - Residual stresses relaxation in heteroepitaxial growth of thin film 
AU  - Khalil El-Hami 
AU  - Aziz SOUFI 
AB  - The dynamic of edge dipoles dislocations nucleation’s from free lateral areas, near the thin film-substrate
interfaces obtained by heteroepitaxial growth is discussed. The analysis method uses the superposition of image
dislocations and Boussinesq surface forces distribution. The theoretical calculation is carried out using the conjugate
gradient method and Mathematica code. This work reveals how the stability of edge dislocations dipoles, nucleated from
lateral surface is very important to evacuate strains Misfit between mesh parameters. 
DO  - 10.21494/ISTE.OP.2017.0182 
JF  - Uncertainties and Reliability of Multiphysical Systems 
KW  - heteroepitaxy,  thin film,  interface dislocation,  image forces,  Boussinesq forces,  dislocation dipole, hétéroépitaxie,  film mince,  dislocation de l’interface,  forces de l’image,  forces de Boussinesq,  dipôle de dislocation,  
L1  - https://www.openscience.fr/IMG/pdf/iste_incertfia17v2n9.pdf 
LA  - en 
PB  - ISTE OpenScience 
DA  - 2017/11/3 
SN  - 2514-569X 
TT  - Contraintes résiduelles de relaxation dans la croissance hétéroépitaxiale des films minces 
UR  - https://www.openscience.fr/Residual-stresses-relaxation-in-heteroepitaxial-growth-of-thin-film 
IS  - Numéro 2 
VL  - 1 
ER  -