TY  - Type of reference 
TI  - Capturing Performance Limiting Effects in Tunnel-FETs 
AU  - Michael Graef 
AU  - Fabian Hosenfeld 
AU  - Fabian Horst 
AU  - Atieh Farokhnejad 
AU  - Benjamín Iñíguez 
AU  - Alexander Kloes 
AB  - In this paper a two-dimensional analytical Tunnel-FET model is revised. It is used to evaluate performance enhancing measures for the TFET regarding device geometry and physical effects. The usage of hetero-junctions is discussed and a way to suppress the ambipolar behavior of the TFET is shown. In focus of this work are the emerging variability issues with this new type of device. Random-dopant-fluctuations (rdf) have a major influence on the device performance. This effect is analyzed and compared with rdf effects in a MOSFET device. The drawn conclusions lead to a
re-evaluation of performance limiting aspects of fabricated TFET devices. 
DO  - 10.21494/ISTE.OP.2018.0220 
JF  - Nanoelectronic Devices 
KW  - Random Dopant Fluctuation (RDF),  Randomized Profiles,  Gaussian Doping Profiles,  Trap-Assisted-
Tunneling (TAT),  Double-Gate (DG) Tunnel-FET,  Analytical Modeling, Random Dopant Fluctuation (RDF),  Randomized Profiles,  Gaussian Doping Profiles,  Trap-Assisted-
Tunneling (TAT),  Double-Gate (DG) Tunnel-FET,  Analytical Modeling,  
L1  - http://www.openscience.fr/IMG/pdf/iste_componano18v1n6.pdf 
LA  - en 
PB  - ISTE OpenScience 
DA  - 2018/02/20 
SN  - 2516-3914 
TT  - Effets limitant la performance des FET Tunnel 
UR  - http://www.openscience.fr/Capturing-Performance-Limiting-Effects-in-Tunnel-FETs 
IS  - Tunnel FETs 
VL  - 1 
ER  -