TY  - Type of reference 
TI  - Influence of the nucleation layer on the thermomechanical behavior of HEMT 
AU  - Abdelkhalak El Hami 
AU  - Bouchaïb Radi 
AU  - Abdelhamid Amar 
AB  - The main goal of this paper is to study the influence of geometrical parameters of the high electron mobility transistor (HEMT) structure. We will develop the electro-thermomechanical modeling by the finite element method, using Comsol multiphysics software. This model allowed us to simulate the thermomechanical behavior of the HEMT according to the operating conditions. It also allowed us to study the influence of the nucleation layer on this behavior. The results of the numerical simulations obtained showed that, although the thickness of the layer does not exceed 1 μm, it has a great influence on the thermal and mechanical behavior of the component. Therefore, this layer must be taken into consideration for any study that aims to develop or optimize this technology. 
DO  - 10.21494/ISTE.OP.2022.0782 
JF  - Uncertainties and Reliability of Multiphysical Systems 
KW  - Thermomechanical modeling,  FEM,  HEMT,  nucleation layer, Modélisation thermomécanique,  FEM,  HEMT,  couche de nucléation,  
L1  - http://www.openscience.fr/IMG/pdf/iste_incertfia21v5n1_6.pdf 
LA  - en 
PB  - ISTE OpenScience 
DA  - 2022/01/21 
SN  - 2514-569X 
TT  - Influence de la couche de nucléation sur le comportement thermomécanique du HEMT 
UR  - http://www.openscience.fr/Influence-of-the-nucleation-layer-on-the-thermomechanical-behavior-of-HEMT 
IS  - Issue 1 
VL  - 5 
ER  -