@ARTICLE{10.21494/ISTE.OP.2020.0570, 

TITLE={Thermal optimization of the high electron mobility transistor (HEMT) using the CMA-ES method}, 
  
AUTHOR={Radi Bouchaib, Amar Abdelhamid, Hamdani Hamid, El Hami Abdelkhalak, }, 
	
JOURNAL={Uncertainties and Reliability of Multiphysical Systems}, 
	
VOLUME={4}, 

NUMBER={Issue 1}, 
	
YEAR={2020}, 

URL={http://www.openscience.fr/Thermal-optimization-of-the-high-electron-mobility-transistor-HEMT-using-the}, 
	
DOI={10.21494/ISTE.OP.2020.0570}, 
	
ISSN={2514-569X}, 
	
ABSTRACT={The optimization aims to ensure a robust system design with minimal cost, this work focuses on the optimization of the High Electron Mobility Transistor (HEMT), it is a very important element in high power mechatronic systems. It contains in its structure several layers of materials, the geometrical and thermal parameters of these layers influence the operating temperature of the transistor, hence its performance. Using the CMA-ES method coded on Matlab, a finite element model developed on Comsol multiphysics and a coupling between the two softwares, these parameters have been optimized in order to reduce the maximum operating temperature of the HEMT, so that the transistor performs its function with less influence on the other characteristics.}}