@ARTICLE{10.21494/ISTE.OP.2019.0321, TITLE={Technologies 22FDX® pour les Applications très basse puissance IoT, RF et Ondes Millimétriques}, AUTHOR={Jan Hoentschel, Luca Pirro, Rick Carter, Manfred Horstmann, }, JOURNAL={Composants nanoélectroniques}, VOLUME={2}, NUMBER={FDSOI}, YEAR={2019}, URL={http://www.openscience.fr/Technologies-22FDX-R-pour-les-Applications-tres-basse-puissance-IoT-RF-et-Ondes}, DOI={10.21494/ISTE.OP.2019.0321}, ISSN={2516-3914}, ABSTRACT={In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed.}}